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1N5333B Series
Preferred Device
5 Watt Surmetict 40 Zener Voltage Regulators
This is a complete series of 5 Watt Zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-molded plastic package that offers protection in all common environmental conditions.
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Cathode
Anode
* * * * *
Zener Voltage Range - 3.3 V to 200 V ESD Rating of Class 3 (>16 kV) per Human Body Model Surge Rating of up to 180 W @ 8.3 ms Maximum Limits Guaranteed on up to Six Electrical Parameters These devices are manufactured with a Pb-Free external lead finish only*
AXIAL LEAD CASE 17 PLASTIC
Mechanical Characteristics CASE: Void free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230C, 1/16 in. from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Max. Steady State Power Dissipation @ TL = 75C, Lead Length = 3/8 in Derate above 75C Operating and Storage Temperature Range Symbol PD Value 5 40 TJ, Tstg -65 to +200 Unit W mW/C C
MARKING DIAGRAM
L 1N 53xxB YWW
L 1N53xxB Y WW
= Assembly Location = Device Code = (See Table Next Page) = Year = Work Week
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device 1N53xxB 1N53xxBRL 1N53xxBTA* Package Axial Lead Axial Lead Axial Lead Shipping 1000 Units/Box 4000/Tape & Reel 2000/Ammo Pack
*1N5361B Not Available in 2000/Ammo Pack For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2004
1
December, 2004 - Rev. 4
Publication Order Number: 1N5333B/D
1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types) Symbol VZ IZT ZZT IZK ZZK IR VR IF VF IR DVZ IZM Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Current Maximum Zener Impedance @ IZK Reverse Leakage Current @ VR Breakdown Voltage Forward Current Forward Voltage @ IF Maximum Surge Current @ TA = 25C Reverse Zener Voltage Change Maximum DC Zener Current VZ VR IR VF IZT V IF I
Zener Voltage Regulator
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1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Voltage (Note 2) Device (Note 1) Device Marking VZ (Volts) Min Nom Max @ IZT mA Zener Impedance (Note 2) ZZT @ IZT W ZZK @ IZK W IZK mA Leakage Current IR @ VR mA Max Volts
IR (Note 3) A
DVZ (Note 4) Volts
IZM (Note 5) mA
1N5333B 1N5334B 1N5335B 1N5336B 1N5337B 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B
1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B
1N5333B 1N5334B 1N5335B 1N5336B 1N5337B 1N5338B 1N5339B 1N5340B 1N5341B 1N5342B
1N5343B 1N5344B 1N5345B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B
3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.70 5.89 6.46
7.13 7.79 8.27 8.65 9.50 10.45 11.4 12.35 13.3 14.25
3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8
7.5 8.2 8.7 9.1 10 11 12 13 14 15
3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.30 6.51 7.14
7.88 8.61 9.14 9.56 10.5 11.55 12.6 13.65 14.7 15.75
380 350 320 290 260 240 220 200 200 175
175 150 150 150 125 125 100 100 100 75
3 2.5 2 2 2 1.5 1 1 1 1
1.5 1.5 2 2 2 2.5 2.5 2.5 2.5 2.5
400 500 500 500 450 400 400 300 200 200
200 200 200 150 125 125 125 100 75 75
1 1 1 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 1
300 150 50 10 5 1 1 1 1 10
10 10 10 7.5 5 5 2 1 1 1
1 1 1 1 1 1 2 3 3 5.2
5.7 6.2 6.6 6.9 7.6 8.4 9.1 9.9 10.6 11.5
20 18.7 17.6 16.4 15.3 14.4 13.4 12.7 12.4 11.5
10.7 10 9.5 9.2 8.6 8.0 7.5 7.0 6.7 6.3
0.85 0.8 0.54 0.49 0.44 0.39 0.25 0.19 0.1 0.15
0.15 0.2 0.2 0.22 0.22 0.25 0.25 0.25 0.25 0.25
1440 1320 1220 1100 1010 930 865 790 765 700
630 580 545 520 475 430 395 365 340 315
1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B* 1N5362B
1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B 1N5360B 1N5361B 1N5362B
15.2 16.15 17.1 18.05 19 20.9 22.8 23.75 25.65 26.6
16 17 18 19 20 22 24 25 27 28
16.8 17.85 18.9 19.95 21 23.1 25.2 26.25 28.35 29.4
75 70 65 65 65 50 50 50 50 50
2.5 2.5 2.5 3 3 3.5 3.5 4 5 6
75 75 75 75 75 75 100 110 120 130
1 1 1 1 1 1 1 1 1 1
1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
12.2 12.9 13.7 14.4 15.2 16.7 18.2 19 20.6 21.2
6.0 5.8 5.5 5.3 5.1 4.7 4.4 4.3 4.1 3.9
0.3 0.35 0.4 0.4 0.4 0.45 0.55 0.55 0.6 0.6
295 280 264 250 237 216 198 190 176 170
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
1. TOLERANCE AND TYPE NUMBER DESIGNATION The JEDEC type numbers shown indicate a tolerance of 5%. 2. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK) Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (TA = 25C +8C, -2C). 3. SURGE CURRENT (IR) Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 2 (TA = 25C +8C, -2C). 4. VOLTAGE REGULATION (DVZ) The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 10 ms. Mounting contact located as specified in Note 2 (TA = 25C +8C, -2C). 5. MAXIMUM REGULATOR CURRENT (IZM) The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device body. *Not Available in the 2000/Ammo Pack.
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1N5333B Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.2 V Max @ IF = 1.0 A for all types)
Zener Voltage (Note 7) Device (Note 6) 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B Device Marking 1N5363B 1N5364B 1N5365B 1N5366B 1N5367B VZ (Volts) Min 28.5 31.35 34.2 37.05 40.85 Nom 30 33 36 39 43 Max 31.5 34.65 37.8 40.95 45.15 @ IZT mA 40 40 30 30 30 Zener Impedance (Note 7) ZZT @ IZT W 8 10 11 14 20 ZZK @ IZK W 140 150 160 170 190 IZK mA 1 1 1 1 1 Leakage Current IR @ VR mA Max 0.5 0.5 0.5 0.5 0.5 Volts 22.8 25.1 27.4 29.7 32.7
IR (Note 8) A 3.7 3.5 3.5 3.1 2.8
DVZ (Note 9) Volts 0.6 0.6 0.65 0.65 0.7
IZM (Note 10) mA 158 144 132 122 110
1N5368B 1N5369B 1N5370B 1N5371B 1N5372B
1N5373B 1N5374B 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1N5381B 1N5382B
1N5368B 1N5369B 1N5370B 1N5371B 1N5372B
1N5373B 1N5374B 1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1N5381B 1N5382B
44.65 48.45 53.2 57 58.9
64.6 71.25 77.9 82.65 86.45 95 104.5 114 123.5 133
47 51 56 60 62
68 75 82 87 91 100 110 120 130 140
49.35 53.55 58.8 63 65.1
71.4 78.75 86.1 91.35 95.55 105 115.5 126 136.5 147
25 25 20 20 20
20 20 15 15 15 12 12 10 10 8
25 27 35 40 42
44 45 65 75 75 90 125 170 190 230
210 230 280 350 400
500 620 720 760 760 800 1000 1150 1250 1500
1 1 1 1 1
1 1 1 1 1 1 1 1 1 1
0.5 0.5 0.5 0.5 0.5
0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5
35.8 38.8 42.6 45.5 47.1
51.7 56 62.2 66 69.2 76 83.6 91.2 98.8 106
2.7 2.5 2.3 2.2 2.1
2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.2
0.8 0.9 1.0 1.2 1.35
1.52 1.6 1.8 2.0 2.2 2.5 2.5 2.5 2.5 2.5
100 93 86 79 76
70 63 58 54.5 52.5 47.5 43 39.5 36.6 34
1N5383B 1N5384B 1N5385B 1N5386B 1N5387B
1N5388B
1N5383B 1N5384B 1N5385B 1N5386B 1N5387B
1N5388B
142.5 152 161.5 171 180.5
190
150 160 170 180 190
200
157.5 168 178.5 189 199.5
210
8 8 8 5 5
5
330 350 380 430 450
480
1500 1650 1750 1750 1850
1850
1 1 1 1 1
1
0.5 0.5 0.5 0.5 0.5
0.5
114 122 129 137 144
152
1.1 1.1 1.0 1.0 0.9
0.9
3.0 3.0 3.0 4.0 5.0
5.0
31.6 29.4 28 26.4 25
23.6
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
6. TOLERANCE AND TYPE NUMBER DESIGNATION The JEDEC type numbers shown indicate a tolerance of 5%. 7. ZENER VOLTAGE (VZ) and IMPEDANCE (IZT and IZK) Test conditions for zener voltage and impedance are as follows: IZ is applied 40 10 ms prior to reading. Mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (TA = 25C +8C, -2C). 8. SURGE CURRENT (IR) Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located as specified in Note 7 (TA = 25C +8C, -2C). 9. VOLTAGE REGULATION (DVZ) The conditions for voltage regulation are as follows: VZ measurements are made at 10% and then at 50% of the IZ max value listed in the electrical characteristics table. The test current time duration for each VZ measurement is 40 10 ms. Mounting contact located as specified in Note 7 (TA = 25C +8C, -2C). 10. MAXIMUM REGULATOR CURRENT (IZM) The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts divided by the actual VZ of the device. TL = 75C at 3/8 maximum from the device body.
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4
1N5333B Series
JL, JUNCTION-TO-LEAD THERMAL RESISTANCE (C/W) 40
30
20 L 10 L
0
PRIMARY PATH OF CONDUCTION IS THROUGH THE CATHODE LEAD 0 0.2 0.4 0.6 0.8 L, LEAD LENGTH TO HEATSINK (INCH) 1
Figure 1. Typical Thermal Resistance
TEMPERATURE COEFFICIENTS
VZ , TEMPERATURE COEFFICIENT (mV/C) @ I ZT VZ , TEMPERATURE COEFFICIENT (mV/C) @ I ZT 10 8 6 4 2 0 -2 3 4 7 5 6 8 VZ, ZENER VOLTAGE @ IZT (VOLTS) 9 10 RANGE 300 200 100 50 30 20 10 5 0 20 40 60 80 100 120 140 160 180 VZ, ZENER VOLTAGE @ IZT (VOLTS) 200 220 RANGE
Figure 2. Temperature Coefficient-Range for Units 3 to 10 Volts
Figure 3. Temperature Coefficient-Range for Units 10 to 220 Volts
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5
1N5333B Series
JL (t, D), TRANSIENT THERMAL RESISTANCE JUNCTION-TO-LEAD ( C/W) 20 10 5 2 1 0.5 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.01 NOTE: BELOW 0.1 SECOND, THERMAL NOTE: RESPONSE CURVE IS APPLICABLE NOTE: TO ANY LEAD LENGTH (L). 0.00 5 0.01 0.05 0.1 t, TIME (SECONDS) DUTY CYCLE, D = t1/t2 SINGLE PULSE D TJL = qJL(t)PPK REPETITIVE PULSES D TJL = qJL(t, D)PPK 0.5 1 5 10 20 50 100 PPK t1 t2
D=0 0.2 0.00 1
Figure 4. Typical Thermal Response L, Lead Length = 3/8 Inch
40 I r , PEAK SURGE CURRENT (AMPS) 10 4 2 1 0.4 0.2 0.1 3 4 6 8 10 20 30 *SQUARE WAVE PW = 100 ms* PW = 1000 ms* 40 60 80 100 200 NOMINAL VZ (V) PW = 1 ms* PW = 8.3 ms* I r , PEAK SURGE CURRENT (AMPS) 20 30 20 10 5 2 1 0.5 0.2 0.1 1 PLOTTED FROM INFORMATION GIVEN IN FIGURE 5 10 100 PW, PULSE WIDTH (ms) 1000 VZ = 200 V VZ = 3.3 V
Figure 5. Maximum Non-Repetitive Surge Current versus Nominal Zener Voltage (See Note 3)
1000 T = 25C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 1000 100 10 1 0.1 TC = 25C 100
Figure 6. Peak Surge Current versus Pulse Width (See Note 3)
T = 25C
10
1
1
2
3
4 5 6 7 8 VZ, ZENER VOLTAGE (VOLTS)
9
10
0.1
10
20
30 40 50 60 VZ, ZENER VOLTAGE (VOLTS)
70
80
Figure 7. Zener Voltage versus Zener Current VZ = 3.3 thru 10 Volts
Figure 8. Zener Voltage versus Zener Current VZ = 11 thru 75 Volts
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6
1N5333B Series
I Z , ZENER CURRENT (mA)
100
10
1
0.1
80
100
120
140 160 180 VZ, ZENER VOLTAGE (VOLTS)
200
220
Figure 9. Zener Voltage versus Zener Current VZ = 82 thru 200 Volts
APPLICATION NOTE Since the actual voltage available from a given Zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from:
TL = qLA PD + TA
For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ (DTJ) may be estimated. Changes in voltage, VZ, can then be found from:
DV = qVZ DTJ
qLA is the lead-to-ambient thermal resistance and PD is the power dissipation. Junction Temperature, TJ, may be found from:
TJ = TL + DTJL
DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 4 for a train of power pulses or from Figure 1 for dc power.
DTJL = qJL PD
qVZ, the Zener voltage temperature coefficient, is found from Figures 2 and 3. Under high power-pulse operation, the Zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Data of Figure 4 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure 5 be exceeded.
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7
1N5333B Series
PACKAGE DIMENSIONS
AXIAL LEAD CASE 17-02 ISSUE C
NOTES: 1. LEAD DIAMETER AND FINISH NOT CONTROLLED WITHIN DIMENSION F.
B D K F
2 DIM A B D F K
INCHES MIN MAX 0.330 0.350 0.130 0.145 0.037 0.043 --- 0.050 1.000 1.250
MILLIMETERS MIN MAX 8.38 8.89 3.30 3.68 0.94 1.09 --- 1.27 25.40 31.75
STYLE 1: PIN 1. ANODE 2. CATHODE
A
1
F K
SURMETIC is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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8
1N5333B/D
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